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Ge single crystal substrate

KINHENG CRYSTAL MATERIAL(SHANGHAI) CO., LTD

Ge single crystal substrate

Ge single crystal substrate

Major capability parameter Growth method Czochralski method Crystal structure M3 Unit cell constant a=5.65754 Å Density 5.323g/cm3 Melt point 937.4℃ Doped material No doped Sb-doped In / Ga –doped ...

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